Structural investigation of GaInP nanowires using X-ray diffraction
Identifieur interne : 000473 ( Main/Repository ); précédent : 000472; suivant : 000474Structural investigation of GaInP nanowires using X-ray diffraction
Auteurs : RBID : Pascal:13-0310629Descripteurs français
- Pascal (Inist)
- Structure cristalline, Nanofil, Nanomatériau, Diffraction RX, Composition chimique, Synthèse nanomatériau, Méthode MOVPE, Fluctuation, Réseau réciproque, Espace réciproque, Rayonnement synchrotron, Gradient concentration, Diagramme diffraction, Spectrométrie dispersive, Phosphure de gallium, Phosphure d'indium, Semiconducteur III-V, GaInP, GaxIn1-xP, 6146, 8107V, 8107B, 8116.
English descriptors
- KwdEn :
- Chemical composition, Concentration gradient, Crystal structure, Diffraction pattern, Dispersive spectrometry, Fluctuations, Gallium phosphide, III-V semiconductors, Indium phosphide, MOVPE method, Nanomaterial synthesis, Nanostructured materials, Nanowires, Reciprocal lattice, Reciprocal space, Synchrotron radiation, XRD.
Abstract
In this work the structure of ternary GaxIn1 - xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural investigation of GaInP nanowires using X-ray diffraction</title><author><name sortKey="Kriegner, D" uniqKey="Kriegner D">D. Kriegner</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69</s1><s2>4040 Linz</s2><s3>AUT</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>4040 Linz</wicri:noRegion></affiliation></author><author><name sortKey="Persson, J M" uniqKey="Persson J">J. M. Persson</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Electron Nanoscopy, Technical University of Denmark, Fysikvej, Building 307</s1><s2>2800 Kgs. Lyngby</s2><s3>DNK</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Danemark</country><wicri:noRegion>2800 Kgs. Lyngby</wicri:noRegion></affiliation></author><author><name sortKey="Etzelstorfer, T" uniqKey="Etzelstorfer T">T. Etzelstorfer</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69</s1><s2>4040 Linz</s2><s3>AUT</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>4040 Linz</wicri:noRegion></affiliation></author><author><name sortKey="Jacobsson, D" uniqKey="Jacobsson D">D. Jacobsson</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118</s1><s2>22100 Lund</s2><s3>SWE</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>22100 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Wallentin, J" uniqKey="Wallentin J">J. Wallentin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118</s1><s2>22100 Lund</s2><s3>SWE</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>22100 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Wagner, J B" uniqKey="Wagner J">J. B. Wagner</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Electron Nanoscopy, Technical University of Denmark, Fysikvej, Building 307</s1><s2>2800 Kgs. Lyngby</s2><s3>DNK</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Danemark</country><wicri:noRegion>2800 Kgs. Lyngby</wicri:noRegion></affiliation></author><author><name sortKey="Deppert, K" uniqKey="Deppert K">K. Deppert</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118</s1><s2>22100 Lund</s2><s3>SWE</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>22100 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Borgstrom, M T" uniqKey="Borgstrom M">M. T. Borgström</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118</s1><s2>22100 Lund</s2><s3>SWE</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>22100 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Stangl, J" uniqKey="Stangl J">J. Stangl</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69</s1><s2>4040 Linz</s2><s3>AUT</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>4040 Linz</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0310629</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0310629 INIST</idno><idno type="RBID">Pascal:13-0310629</idno><idno type="wicri:Area/Main/Corpus">000696</idno><idno type="wicri:Area/Main/Repository">000473</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term><term>Concentration gradient</term><term>Crystal structure</term><term>Diffraction pattern</term><term>Dispersive spectrometry</term><term>Fluctuations</term><term>Gallium phosphide</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>MOVPE method</term><term>Nanomaterial synthesis</term><term>Nanostructured materials</term><term>Nanowires</term><term>Reciprocal lattice</term><term>Reciprocal space</term><term>Synchrotron radiation</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Structure cristalline</term><term>Nanofil</term><term>Nanomatériau</term><term>Diffraction RX</term><term>Composition chimique</term><term>Synthèse nanomatériau</term><term>Méthode MOVPE</term><term>Fluctuation</term><term>Réseau réciproque</term><term>Espace réciproque</term><term>Rayonnement synchrotron</term><term>Gradient concentration</term><term>Diagramme diffraction</term><term>Spectrométrie dispersive</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Semiconducteur III-V</term><term>GaInP</term><term>GaxIn1-xP</term><term>6146</term><term>8107V</term><term>8107B</term><term>8116</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work the structure of ternary Ga<sub>x</sub>In<sub>1 -</sub> <sub>x</sub>P nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>543</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Structural investigation of GaInP nanowires using X-ray diffraction</s1></fA08><fA09 i1="01" i2="1" l="FRE"><s1>International Conference NanoSEA (NANOstructures SElf Assembly) 2012</s1></fA09><fA11 i1="01" i2="1"><s1>KRIEGNER (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>PERSSON (J. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>ETZELSTORFER (T.)</s1></fA11><fA11 i1="04" i2="1"><s1>JACOBSSON (D.)</s1></fA11><fA11 i1="05" i2="1"><s1>WALLENTIN (J.)</s1></fA11><fA11 i1="06" i2="1"><s1>WAGNER (J. B.)</s1></fA11><fA11 i1="07" i2="1"><s1>DEPPERT (K.)</s1></fA11><fA11 i1="08" i2="1"><s1>BORGSTRÖM (M. 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Lyngby</s2><s3>DNK</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118</s1><s2>22100 Lund</s2><s3>SWE</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA15 i1="01"><s1>IM2NP-CNRS</s1><s2>Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>University of Roma "Tor Vergata"</s1><s2>Roma</s2><s3>ITA</s3><sZ>2 aut.</sZ></fA15><fA20><s1>100-105</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000501544010220</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0310629</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this work the structure of ternary Ga<sub>x</sub>In<sub>1 -</sub> <sub>x</sub>P nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. 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